Learn more about our GaN portfolio
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Our new fully integrated automotive GaN FETs reduce the size of electric
vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared
to existing Si or SiC solutions – enabling engineers to achieve extended
battery range, increased system reliability and lower design cost. The new
LMG3522R030-Q1 [1] and LMG3525R030-Q1 [2] offer 62% faster switching speeds
in the DC/DC power-conversion stage and a 59% reduction in the size of power
magnetics. The integration of the FET and the gate driver enables a switching
speed of greater than 150 V/ns – lowering losses by 66% over discrete GaN
FETs. With more than 40 million device-reliability hours, over 5 GWh of
in-application testing, and less than 1 FIT rate for 10-year lifetime, our
GaN offers the ruggedness expected by the automotive industry.
[1] [ Ссылка ]
[2] [ Ссылка ]
