As the world looks beyond silicon for the next generation of power electronics, NexGen Vertical GaN™, the world’s first GaN-on-GaN power semiconductor, unlocks the full potential of Gallium Nitride (GaN). It is the only wide band gap power semiconductor that provides high-voltage capabilities up to 4kV, switching frequencies up to 10MHz, and avalanche and short-circuit robustness. This makes it an ideal power semiconductor for applications from LED Lighting and Computing to Data Centers and Electric Vehicles. NexGen is reinventing power electronics by leveraging this breakthrough technology and building a scalable, software-configurable power platform that enables the smallest, lightest, and most efficient power systems.

Shahin Sharifzadeh’s presentation on the GaN-Day at Bodo’s 2022 WBG Event.
He is CEO at NexGen Power Systems.

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