“X-GaN (gallium nitride)”, a compound of Gallium (Ga) and Nitrogen (N), possesses high breakdown voltage and low conduction resistance characteristics that enable miniaturization and high-speed switching. Unlike conventional transistors made from silicon that require a bigger chip area to keep the on-resistance low, X-GaN™ devices having small sizes (and thus low parasitic capacitance) allow high-speed switching and miniaturization with ease.
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