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The Fermi-Dirac Integral allows you to calculate the electron and hole concentration of a semiconductor in terms of material properties and a single parameter that describes the difference between the conduction/valence band edges and the quasi-fermi level. It can also be extended for use in quantum wells, quantum wires, and quantum dots, which is extremely useful for optoelectronic devices.

This is part of my series on semiconductor physics (often called Electronics 1 at university). This is based on the book Semiconductor Physics and Devices by Donald Neamen, as well as the EECS 170A/174 courses taught at UC Irvine.

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