This lecture is part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
At the nanometer scale, the concepts of device and material meet, and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. The importance of the appropriate basis set representation that needs to be selected to cover the important physics of semiconductor devices will become evident. These lectures will not focus on the underlying theories; they will focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.
on nanoHUB: [ Ссылка ]
