Title:Spin-torque & spin-orbit-torque: opportunities & challenges for modern computing,
Abstract: Abstract: Spin-transfer-torque or spin-orbit-torque switchable magnetic tunnel junction is an enabling device that brought the recent technology promises and product offerings of magnetic random access memory. In this lecture I’ll review our current understanding on this topic with an emphasis on device and materials physics underpinning, and the likely requirements for future generations in related applications space[1-3]. Key considerations include switching current, speed, and data-retention trade-off, the need to seek more efficient charge-to-spin conversion mechanisms while preserving memory density and minimize transistor count. Finally, I will touch on some nascent applications ideas involving the magnetic tunnel junction as a compact and power-efficient CMOS backend-compatible entropy source for probabilistic computing, and the device physics related to sub-nanosecond stochastic bit-stream generation[4], with potential applications in computing schemes beyond von Neumann architecture.
