"VBsemi MTN2306AN3-VB is a SOT23 packaged N-Channel trench field effect transistor. The following are detailed parameters and application introduction:

- **Parameter Description:**
- Operating Voltage (VDS): 30V
- Continuous Drain Current (ID): 6.5A
- On Resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V
- Threshold Voltage (Vth): 1.2~2.2V

- **Application Introduction:**
- Applicable Package: SOT23
- Main Application: Used as an N-Channel trench field effect transistor, suitable for working in low voltage and medium current applications.

- **Application fields:**
- Power management module
- Current control module
- Low voltage, medium current switching power supply

- **Module application:**
- Used in voltage regulation, switching and power control modules.
- Widely used in electronic devices that require efficient energy consumption and compact space.

This device is suitable for applications that require efficient power management and control, such as power adapters, battery management, and other occasions that require regulated power."

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