This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.
Learning Objectives:
Quantum Transport Simulator
Full-Band and Atomistic
III-V HEMTs
Performance Analysis
Good Agreement with Experiment
Some Open Issues
Outlook
Improve Models (Contact)
Investigate Scaling of Gate Length
Scattering?
On nanoHUB: [ Ссылка ]
