Samsung Electronics today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture

Samsung is starting the first application of the nanosheet transistor with semiconductor chips for high performance, low power computing application and plans to expand to mobile processors.

Samsung’s proprietary technology utilizes nanosheets with wider channels, which allow higher performance and greater energy efficiency compared to GAA technologies using nanowires with narrower channels. Utilizing the 3nm GAA technology, Samsung will be able to adjust the channel width of the nanosheet in order to optimize power usage and performance to meet various customer needs.

As technology nodes get smaller and chip performance needs grow greater, IC designers face challenges of handling tremendous amounts of data to verify complex products with more functions and tighter scaling. To meet such demands, Samsung strives to provide a more stable design environment to help reduce the time required for design, verification and sign-off process, while also boosting product reliability.

✓ 00:00 Samsung Electronics started initial production of its 3-nanometer process node applying
✓ 00:36 Samsung is starting the first application of the nanosheet transistor with semiconductor chips for high performance
✓ 01:24 Design-Technology optimization for maximized PPA
✓ 02:31 Providing 3nm design infrastructure & services with SAFETM partners

#SamsungElectronics #3nmProcess #GAAarchitecture

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