*Welcome to the concluding episode of our comprehensive series on optical photolithography for silicon wafer semiconductor fabrication. In this final installment, we turn our focus to photoresist technology, a critical component that significantly impacts the performance of the lithography process. This episode delves into the complexities of photoresists, interlayers, and photochemicals, covering a range from i-line to immersion ArF resists. We discuss the roles and formulations of anti-reflection coatings like TARC and BARC, alongside advanced CD shrink technologies such as RELACS, SAFIER, and DSA. Additionally, we explore the vital photochemicals involved in the coating and development processes, including thinners, developers, and rinse solutions. Below, you will find the main chapters of this video. Click on any timestamp to jump directly to the section of interest.*

1. Introduction to Lithography Material
[02:55] Lithography Materials: Overview of photoresist, interlayers, and photochemicals.
[04:30] Resist Types: Exploring Positive/Negative Resists and Positive/Negative Tone Develop.

2. Photoresist (PR)
[07:50] Photoresist Components and Functionality: Composition and roles of resin polymer, sensitizer, additives, and solvents.
[10:50] Development of Photoresist Materials: Historical evolution of resin polymers & sensitizers from UV Negative to ArF Positive PR.
[15:40] G-/I-Line Resist: Photochemical transformation from developer insoluble Novolak-DNQ to developer soluble ICA.
[20:30] Limitations of DNQ-based Resist: Absorption issues of resin polymers.
[23:25] Chemical Amplified Resist (CAR): IBM's development for KrF resists.
[27:45] CAR for ArF Resist: Transition from aliphatic to alicyclic design.
[30:05] Post Exposure Delay (PED) Effect: Dynamics of photo acid diffusion during post exposure bake (PEB) and neutralization during post exposure delay (PED).
[33:05] Base Quencher: Solutions for PED issues.
[35:35] Photo Decomposable Quencher (PDQ): Enhancements for Line Width Roughness (LWR).
[37:35] Leaching Challenges in Immersion ArF Lithography: Mechanisms of watermark defects.
[39:50] Developer-soluble Topcoat (TC): Addressing leaching and contamination issues in immersion ArF.
[42:45] Non-topcoat Resist: Strategies including polymer blending and Intrinsic Topcoat (ITC).
[48:25] Photo-sensitive Polyimide (PSPI): Applications to Re-Distribution Layer (RDL).

3. Interlayer
[52:10] Swing Curves and Standing Waves: Issues due to light reflection.
[55:30] Bottom Antireflective Coating (BARC): Exploring single-layer, dual-layer, and graded BARC.
[57:55] Principle of BARC: Comparisons with and without BARC.
[58:45] Organic BARC Design
[1:01:35] Developable BARC (D-BARC): Applications in ion implantation.
[1:04:50] CD Shrinkage: Technologies such as Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS).
[1:07:15] CD Shrinkage: Exploring Shrink Assist Film for Enhanced Resolution (SAFIER).
[1:09:15] Block Copolymer (BCP) & Directed Self-Assembly (DSA): defect density issues.

4. Photo Chemicals
[1:11:35] Thinner: Applications for Resist Reduce Consumption (RRC) and Edge Bead Removal (EBR).
[1:13:15] Positive Tone Develop (PTD) vs Negative Tone Develop (NTD)
[1:16:25] PTD vs NTD CAR Performance: Differences in swelling.
[1:18:05] Negative Tone Imaging (NTI): Applications for High Aspect Ratio Contact (HARC) with bright field mask and NTD.
[1:19:10] Surfactant Rinse Effect: Addressing resist pattern collapse.

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